SSF3N80D - MOSFET

Silikron

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

TO-252.
Advanced MOSFET process technology.
Special designed for PWM, load switching and general purpose.

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SSF3N80D mosfet by Silikron - Datasheet Preview

Datasheet Details

Part number	SSF3N80D
Manufacturer	Silikron
File Size	436.60 KB
Description	MOSFET
Datasheet	SSF3N80D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS RDS(on) 800V 3.8Ω (typ.) ID 3A Features and Benefits: TO-252  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF3N80D Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.