SSF4703 - MOSFET

Silikron

General Description

The SSF4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

Key Features

MOSFET VDS = -20V,ID = -3.4A RDS(ON) < 160mΩ @ VGS=-1.8V RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V.

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SSF4703 mosfet by Silikron - Datasheet Preview

Datasheet Details

Part number	SSF4703
Manufacturer	Silikron
File Size	208.54 KB
Description	MOSFET
Datasheet	SSF4703 Datasheet

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Full PDF Text Transcription (Reference)

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SSF4703 DESCRIPTION The SSF4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES ● MOSFET VDS = -20V,ID = -3.4A RDS(ON) < 160mΩ @ VGS=-1.8V RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ●SCHOTTKY VR = 20V, IF = 1A, VF<0.5V @ 0.