The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
DESCRIPTION
The SSF8521 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.
GENERAL FEATURES
● MOSFET VDS = -20V,ID = -4.4A RDS(ON) < 170mΩ @ VGS=-1.8V RDS(ON) < 110mΩ @ VGS=-2.5V RDS(ON) < 80mΩ @ VGS=-4.5V SCHOTTKY VR = 20V, IF = 4.1A, VF<0.575V @ 1.