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SSF4607D MOSFET

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Description

Main Product Characteristics: VDSS RDS(on) -30V 19mΩ(typ.) ID -25A ① TO-252 .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.

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Features

* Advanced trench MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

SSF4607D Distributors

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