SSF4607D Datasheet and Specifications PDF

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an.

and Benefits:
* Advanced trench MOSFET process technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating temperature SSF4607D D G Marking and pin Assignment S S.

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an .

and Benefits
* Advanced trench MOSFET process technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating temperature
* Lead free product SSF4607D 30V P-Channel MOS.