Datasheet Summary
Main Product Characteristics
VDSS
-30V
RDS(on) 19mΩ(typ.)
ID -25A ①
TO-252
Features and Benefits
- Advanced trench MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
- Lead free product
30V P-Channel MOSFET
Marking and Pin Assignment
S Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable...
