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SSF4606 Datasheet MOSFET

Manufacturer: Silikron Semiconductor

Overview: DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications.

General Description

The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge.

The complementary MOSFET may be used in power inverters, and other applications.

GENERAL

Key Features

  • N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V.
  • P-Channel VDS = -30V,ID = -6A RDS(ON) < 58mΩ @ VGS=-4.5V RDS(ON) < 35mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package SSF4606 N-channel P-channel Schematic diagram Marking and pin Assignment.

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