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SSF4606 - MOSFET

Download the SSF4606 datasheet PDF. This datasheet also covers the SSF4606-GOOD variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge.

The complementary MOSFET may be used in power inverters, and other applications.

Key Features

  • N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V.
  • P-Channel VDS = -30V,ID = -6A RDS(ON) < 58mΩ @ VGS=-4.5V RDS(ON) < 35mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product.
  • Surface Mount Package N-channel P-channel Schematic Diagram Marking and pin Assignment SOP-8 Top View.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF4606-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF4606
Manufacturer GOOD-ARK
File Size 574.46 KB
Description MOSFET
Datasheet download datasheet SSF4606 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSF4606 30V Complementary MOSFET DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. GENERAL FEATURES ●N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V ●P-Channel VDS = -30V,ID = -6A RDS(ON) < 58mΩ @ VGS=-4.