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SSF4607D - MOSFET

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • Advanced trench MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSF4607D
Manufacturer Silikron Semiconductor
File Size 518.61 KB
Description MOSFET
Datasheet download datasheet SSF4607D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS RDS(on) -30V 19mΩ(typ.) ID -25A ① TO-252 Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF4607D D G Marking and pin Assignment S Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.