Datasheet Summary
Main Product Characteristics:
VDSS RDS(on)
-30V 19mΩ(typ.)
ID -25A ①
TO-252
Features and Benefits:
- Advanced trench MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
Marking and pin Assignment
S Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in power switching...
