SSIG15N135H mosfet equivalent, mosfet.
* Advanced Trench-FS Process Technology
* Low Collector-Emitter Saturation Voltage, Typical
Data is 1.9V@15A
* Fast Switching
* High Input Impedance
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Absolute max Rating:
Symbol IC @ TC = 25°C IC @ TC = 100°C ICM
PD @TC = 25°C
VCES VGES TJ TSTG TL
Parameter Continuo.
It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application of induction cook.
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