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SSIG20N135H Datasheet MOSFET

Manufacturer: Silikron Semiconductor

Overview: Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.

General Description

: It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating.

These

Key Features

  • Advanced Trench-FS Process Technology.
  • Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A.
  • Fast Switching.
  • High Input Impedance.
  • Pb- Free Product.
  • Power Switch Circuit of Induction Cooker TO-247 SSIG20N135H Schematic diagram.

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