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SSPL5508 N-Channel enhancement mode power field effect transistors

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Description

Main Product Characteristics VDSS RDS(on) 55V 7.2mΩ(typ.) ID 110A .
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

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Features

* TO-220
* Advanced Process Technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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SSPL5508 N-Channel enhancement mode power field effect transistors Silikron Semiconductor
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