Full PDF Text Transcription for SSPL5508 (Reference)
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SSPL5508. For precise diagrams, and layout, please refer to the original PDF.
Main Product Characteristics VDSS RDS(on) 55V 7.2mΩ(typ.) ID 110A Features and Benefits TO-220 Advanced Process Technology Special designed for PWM, load switching an...
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anced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature SSPL5508 Marking and Pin Assignment Schematic Diagram Description These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
SSPL5508 Datasheet
