SSPL5508 Datasheet and Specifications PDF

SSPL5508-VB SSPL5508-VB Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single FEATURES • 175 °C Junction Temperature • Trench P.

* 175 °C Junction Temperature
* Trench Power MOSFET
* Material categorization: TO-220AB D G GDS S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 17.

These N-Channel enhancement mode power field effect transistors are produced using our proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resista.

and Benefits
* Advanced Process Technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 175℃ operating temperature TO - 220 SSPL5508 55V N-Channel MOSFET Marking and Pin Assi.

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state re.

and Benefits TO-220
* Advanced Process Technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 175℃ operating temperature SSPL5508 Marking and Pin Assignment Schematic Diag.