SSPL5508 Datasheet | Good-Ark Semiconductor

Features and Benefits - Advanced Process Technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 175℃ operating temperature - 220 55V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description These N-Channel enhancement mode power field effect transistors are produced using our proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS@ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3m H Avalanche Current @ L=0.3m H Operating Junction and Storage Temperature Range Max. 110 83 440 200 1.3 55 ± 20 576 62 -55 to +175 Units W W/°C V V m J A °C .goodark. Page 1 of 7 Rev.1.1 55V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. - - - Max. 0.75 62 40 Units ℃/W ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS...