SSPL5508 - N-Channel 60V MOSFET

Datasheet Summary

Features

175 °C Junction Temperature.
Trench Power MOSFET.
Material categorization: TO-220AB D www. VBsemi. com G GDS S N-Channel MOSFET.

VBsemi

📥 Download Datasheet

Datasheet Details

Part number	SSPL5508
Manufacturer	VBsemi
File Size	256.39 KB
Description	N-Channel 60V MOSFET
Datasheet	SSPL5508 Datasheet
Additional preview pages of the SSPL5508 datasheet.

📁 Similar Datasheet

SSPL5508 - N-Channel MOSFET (GOOD-ARK)
SSPL5508 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
SSPL5505 - N-Channel MOSFET (GOOD-ARK)
SSPL5505 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
SSPL50N30H - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
SSPL1010 - Schottky Barrier Rectifier (Silikron Semiconductor)
SSPL1022 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
SSPL1042 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
SSPL1090 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
SSPL2015 - N-Channel MOSFET (GOOD-ARK)

Other Datasheets by VBsemi

SSPS924NE - Dual N-Channel 20V MOSFET

Full PDF Text Transcription

Click to expand full text

SSPL5508-VB SSPL5508-VB Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single FEATURES • 175 °C Junction Temperature • Trench Power MOSFET • Material categorization: TO-220AB D www.VBsemi.com G GDS S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 120 90 Pulsed Drain Current IDM 350 A Continuous Source Current (Diode Conduction) IS 70a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycle  1 %) L = 0.1 mH EAS 125 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C PD 136 3b, 8.

Published: Nov 6, 2025 |