Description
The XT6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features
- s.
- RDS(ON) = 1.5Ω @VGS = 10V.
- Ultra low gate charge (typical 20 nC ).
- Low reverse transfer Capacitance ( CRSS = typical 10pF ).
- Fast switching capability.
- Avalanche energy tested.
- Improved dv/dt capability, high ruggedness.
- Package.
- TO-220
2.Drain
1.Gate
3.Source.
- Ordering Information
XT6N60 ①②③④
Designator ① ② ③
Represents Lead Planting Drain-Source Voltage Package Type
④ Packing Type.
- Pb-free plating product number: 6N60L
Symbol L A/B T.
XT6N60 Datasheet
