XT6N60 Overview
Description
The XT6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
Key Features
- RDS(ON) = 1.5Ω @VGS = 10V
- Ultra low gate charge (typical 20 nC )
- Low reverse transfer Capacitance ( CRSS = typical 10pF )
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
