Datasheet Details
| Part number | XT6N60 |
|---|---|
| Manufacturer | Silinktek |
| File Size | 469.59 KB |
| Description | 600/650 Volts N-CHANNEL MOSFET |
| Datasheet |
 XT6N60 Datasheet
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General Description
The XT6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Key Features
- s.
- RDS(ON) = 1.5Ω @VGS = 10V.
- Ultra low gate charge (typical 20 nC ).
- Low reverse transfer Capacitance ( CRSS = typical 10pF ).
- Fast switching capability.
- Avalanche energy tested.
- Improved dv/dt capability, high ruggedness.
- Package.
- TO-220 2.Drain 1.Gate 3.Source.
- Ordering Information XT6N60 ①②③④ Designator ① ② ③ Represents Lead Planting Drain-Source Voltage Package Type ④ Packing Type.
- Pb-free plating product number: 6N60L Symbol L A/B T.