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Simtek
Simtek

U635H16 Datasheet Preview

U635H16 Datasheet

PowerStore 2K x 8 nvSRAM

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U635H16 pdf
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Obsolete - Not Recommended for New Designs
U635H16
PowerStore 2K x 8 nvSRAM
Features
High-performance CMOS non-
volatile static RAM 2048 x 8 bits
25, 35 and 45 ns Access Times
12, 20 and 25 ns Output Enable
Access Times
ICC = 15 mA at 200 ns Cycle Time
Automatic STORE to EEPROM
on Power Down using system
capacitance
Software initiated STORE
(STORE Cycle Time < 10 ms)
Automatic STORE Timing
106 STORE cycles to EEPROM
100 years data retention in
EEPROM
Automatic RECALL on Power Up
Software RECALL Initiation
(RECALL Cycle Time < 20 μs)
Unlimited RECALL cycles from
EEPROM
Single 5 V ± 10 % Operation
Operating temperature ranges:
0 to 70 °C
-40 to 85 °C
QS 9000 Quality Standard
ESD protection > 2000 V
(MIL STD 883C M3015.7-HBM)
RoHS compliance and Pb- free
Packages: PDIP24 (600 mil)
SOP24 (300 mil)
Description
The U635H16 has two separate
modes of operation: SRAM mode
and nonvolatile mode. In SRAM
mode, the memory operates as an
ordinary static RAM. In nonvolatile
operation, data is transferred in
parallel from SRAM to EEPROM or
from EEPROM to SRAM. In this
mode SRAM functions are disab-
led.
The U635H16 is a fast static RAM
(25, 35, 45 ns), with a nonvolatile
electrically erasable PROM
(EEPROM) element incorporated
in each static memory cell. The
SRAM can be read and written an
unlimited number of times, while
independent nonvolatile data resi-
des in EEPROM. Data transfers
from the SRAM to the EEPROM
(the STORE operation) take place
automatically upon power down
using charge stored in system
capacitance.
Transfers from the EEPROM to the
SRAM (the RECALL operation)
take place automatically on power
up. The U635H16 combines the
high performance and ease of use
of a fast SRAM with nonvolatile
data integrity.
STORE cycles also may be initia-
ted under user control via a soft-
ware sequence.
Once a STORE cycle is initiated,
further input or output are disabled
until the cycle is completed.
Because a sequence of addresses
is used for STORE initiation, it is
important that no other read or
write accesses intervene in the
sequence or the sequence will be
aborted.
RECALL cycles may also be initia-
ted by a software sequence.
Internally, RECALL is a two step
procedure. First, the SRAM data is
cleared and second, the nonvola-
tile information is transferred into
the SRAM cells.
The RECALL operation in no way
alters the data in the EEPROM
cells. The nonvolatile data can be
recalled an unlimited number of
times.
Pin Configuration
Pin Description
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1 24
2 23
3 22
4 21
5 20
6 PDIP 19
7
SOP
24
18
8 17
9 16
10 15
11 14
12 13
VCC
A8
A9
W
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
Top View
March 31, 2006
STK Control #ML0050
Signal Name
A0 - A10
DQ0 - DQ7
E
G
W
VCC
VSS
Signal Description
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
1 Rev 1.0



Simtek
Simtek

U635H16 Datasheet Preview

U635H16 Datasheet

PowerStore 2K x 8 nvSRAM

No Preview Available !

U635H16 pdf
U635H16
Block Diagram
A5
A6
A7
A8
A9
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
EEPROM Array
32 x (64 x 8)
STORE
SRAM
Array
RECALL
32 Rows x
64 x 8 Columns
Column I/O
Column Decoder
A0 A1 A2 A3 A4 A10
VCC
VSS
Power
Control
VCC
Store/
Recall
Control
Software
Detect
A0 - A10
G
E
W
Truth Table for SRAM Operations
Operating Mode
EWG
DQ0 - DQ7
Standby/not selected
H
*
*
Internal Read
LHH
High-Z
High-Z
Read
LHL
Data Outputs Low-Z
Write
LL *
Data Inputs High-Z
* H or L
Characteristics
All voltages are referenced to VSS = 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of 5 ns, measured between 10 % and 90 % of VI, as well as input levels of
VIL = 0 V and VIH = 3 V. The timing reference level of all input and output signals is 1.5 V,
with the exception of the tdis-times and ten-times, in which cases transition is measured ± 200 mV from steady-state voltage.
Absolute Maximum Ratingsa
Symbol
Min.
Max.
Unit
Power Supply Voltage
VCC -0.5
7V
Input Voltage
VI
-0.3
VCC+0.5
V
Output Voltage
VO
-0.3
VCC+0.5
V
Power Dissipation
PD
1W
Operating Temperature
C-Type
K-Type
Ta
0
-40
70 °C
85 °C
Storage Temperature
Tstg -65
150 °C
a: Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
STK Control #ML0050
2
Rev 1.0
March 31, 2006


Part Number U635H16
Description PowerStore 2K x 8 nvSRAM
Maker Simtek
Total Page 14 Pages
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