F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 and 45 ns Access Times F 12 and 25 ns Output Enable Access Times F Unlimited Read and Write to SRAM F Hardware STORE Initiation (STORE Cycle Time < 10 ms) F Automatic STORE Timing F 10 STORE cycles to EEPROM F 10 years data retention
Full PDF Text Transcription for U630H04 (Reference)
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Preliminary U630H04 HardStore 512 x 8 nvSRAM Features F Packages: Description F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 and 45 ns Access Times F 12...
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S nonvolatile static RAM 512 x 8 bits F 25 and 45 ns Access Times F 12 and 25 ns Output Enable Access Times F Unlimited Read and Write to SRAM F Hardware STORE Initiation (STORE Cycle Time < 10 ms) F Automatic STORE Timing F 10 STORE cycles to EEPROM F 10 years data retention in EEPROM F Automatic RECALL on Power Up F Hardware RECALL Initiation www.DataSheet4U.com (RECALL Cycle Time < 20 µs) F Unlimited RECALL cycles from EEPROM F Single 5 V ± 10 % Operation F Operating temperature ranges: 5 PDIP28 (300 mil) PDIP28 (600 mil) SOP28 (300 mil) F F 0 to 70 °C -40 to 85 °C CECC 90000 Quality Standard ESD characterization accord
U630H04 Datasheet
