SED3030M mosfet equivalent, n-channel mosfet.
For a single MOSFET
* VDS = 30V
* RDS(ON) = 7.4mΩ@VGS=10V
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-S.
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application
Features
For a single MOSFET
* VDS = 30V
* RDS(ON) = 7.4mΩ@VGS=10V
Pin configurations
Se.
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