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SED4060G Datasheet N-channel MOSFET

Manufacturer: Sino-IC

Overview: SED4060G N-Channel Enhancement-Mode MOSFET Revision: A General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of application

Key Features

  • For a single MOSFET.
  • VDS = 40V.
  • RDS(ON) = 7mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5.
  • 6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 40 ±20 60 200 65 -55 to 175 Units V V A W ℃ Typ Max Units.

More Datasheets from Sino-IC

Part Number Description
SED3030M N-Channel MOSFET

SED4060G Distributor