Datasheet4U Logo Datasheet4U.com

SED4060G - N-Channel MOSFET

This page provides the datasheet information for the SED4060G, a member of the SED4060G-Sino N-Channel MOSFET family.

Description

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

  • For a single MOSFET.
  • VDS = 40V.
  • RDS(ON) = 7mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5.
  • 6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 40 ±20 60 200 65 -55 to 175 Units V V A W ℃ Typ Max Units.

📥 Download Datasheet

Datasheet preview – SED4060G

Datasheet Details

Part number SED4060G
Manufacturer Sino-IC
File Size 556.44 KB
Description N-Channel MOSFET
Datasheet download datasheet SED4060G Datasheet
Additional preview pages of the SED4060G datasheet.

📁 Similar Datasheet

  • SED10HB45 - (SED10HB45 / SED10HE45) SCHOTTKY RECTIFIER (SSDI)
  • SED10HE45 - (SED10HB45 / SED10HE45) SCHOTTKY RECTIFIER (SSDI)
  • SED1180 - CMOS LCD 64-SEGMENT DRIVER (EPSON)
  • SED1181 - CMOS LCD 64-SEGMENT DRIVER (EPSON)
  • SED1190 - CMOS LCD 64-COMMON DRIVERS (EPSON)
  • SED1230 - LCD (EPSON)
  • SED1234 - LCD Controller/Drivers (EPSON)
  • SED1235 - LCD Controller/Drivers (EPSON)
  • SED1278 - CMOS DOT MATRIX LCD CONTROLLER DRIVER (EPSON)
  • SED1330 - CMOS GRAPHIC LCD CONTROLLER (EPSON)
Other Datasheets by Sino-IC

Full PDF Text Transcription

Click to expand full text
SED4060G N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application Features For a single MOSFET  VDS = 40V  RDS(ON) = 7mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5*6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 40 ±20 60 200 65 -55 to 175 Units V V A W ℃ Typ Max Units - 5 ℃/W ShangHai Sino-IC Microelectronic Co., Ltd. 1.
Published: |