SED4060G
SED4060G is N-Channel MOSFET manufactured by Sino-IC.
- Part of the SED4060G-Sino comparator family.
- Part of the SED4060G-Sino comparator family.
Description
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application
Features
For a single MOSFET
- VDS = 40V
- RDS(ON) = 7mΩ @ VGS=10V
Pin configurations
See Diagram below
DD 56
DD 78
1 2 34
S S S G DFN5- 6
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Total Power Dissipation @TA=25℃
Operating Junction Temperature Range
Symbol VDS VGS
PD TJ
Thermal Resistance
Symbol Parameter RθJC Thermal Resistance Junction to Case
Rating 40 ±20 60 200 65
-55 to 175
Units V V
W ℃
Typ Max Units
- 5 ℃/W
Shang Hai Sino-IC Microelectronic Co., Ltd.
1.
Electrical Characteristics (TJ=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS (Note...
