SED4060G Overview
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application.
SED4060G Key Features
- VDS = 40V
- RDS(ON) = 7mΩ @ VGS=10V
SED4060G datasheet by Sino-IC.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | SED4060G |
|---|---|
| Datasheet | SED4060G SED4060G-Sino Datasheet (PDF) |
| File Size | 556.44 KB |
| Manufacturer | Sino-IC |
| Description | N-Channel MOSFET |
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This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application.
| Part Number | Description |
|---|---|
| SED3030M | N-Channel MOSFET |