SED3030M Overview
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application.
SED3030M Key Features
- VDS = 30V
- RDS(ON) = 7.4mΩ@VGS=10V
SED3030M Datasheet Details
| Part number | SED3030M |
|---|---|
| Datasheet | SED3030M SED3030M-Sino Datasheet (PDF) |
| File Size | 494.34 KB |
| Manufacturer | Sino-IC |
| Description | N-Channel MOSFET |
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