SED3030M - N-Channel MOSFET

Product Overview

Part number	SED3030M
Manufacturer	Sino-IC
File Size	494.34 KB
Description	N-Channel MOSFET
Datasheet	SED3030M Datasheet
Note	This datasheet PDF includes multiple part numbers: SED3030M, SED3030M-Sino. Please refer to the document for exact specifications by model.
Additional preview pages of the SED3030M datasheet.

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

For a single MOSFET.
VDS = 30V.
RDS(ON) = 7.4mΩ@VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Symbol VDS VGS ID PD EAS TJ Rating 30 ±20 30 80 40 72 -55 to 175 Units V V A W mJ ℃ Typ Max Units.

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Published: Feb 22, 2019 |