SED3030M
SED3030M is N-Channel MOSFET manufactured by Sino-IC.
- Part of the SED3030M-Sino comparator family.
- Part of the SED3030M-Sino comparator family.
Description
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application
Features
For a single MOSFET
- VDS = 30V
- RDS(ON) = 7.4mΩ@VGS=10V
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Total Power Dissipation @TA=25℃
Single pulse avalanche energy
Operating Junction Temperature Range
Thermal Resistance
Symbol Parameter RθJC Thermal Resistance Junction to Case
Symbol VDS VGS
PD EAS TJ
Rating 30 ±20 30 80 40 72
-55 to 175
Units V V
W m J ℃
Typ Max Units
- 3 ℃/W
Shang Hai Sino-IC Microelectronics Co., Ltd.
1.
Electrical Characteristics (TJ=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS (Note 2)
BVDSS IDSS IGSS VGS(th)
RDS(ON)
Drain-S...
