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SED3030M Datasheet N-channel MOSFET

Manufacturer: Sino-IC

Overview: SED3030M N-Channel Enhancement-Mode MOSFET Revision: A General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of application

Key Features

  • For a single MOSFET.
  • VDS = 30V.
  • RDS(ON) = 7.4mΩ@VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Symbol VDS VGS ID PD EAS TJ Rating 30 ±20 30 80 40 72 -55 to 175 Units V V A W mJ ℃ Typ Max Units.

More Datasheets from Sino-IC

Part Number Description
SED4060G N-Channel MOSFET

SED3030M Distributor