SED3030M Description
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application.
SED3030M Key Features
- VDS = 30V
- RDS(ON) = 7.4mΩ@VGS=10V
- Part: SED3030M
- Manufacturer: Sino-IC
- Size: 494.34 KB
Related Sino-IC Datasheets
| Part Number | Description |
|---|---|
| SED4060G | N-Channel MOSFET |