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SM7341EHKP - Dual N-Channel MOSFET

General Description

G2S 1/DS21/D2S 1/D2 G1S1/D2D1 D1 (SP2in 9) D1 DFN5x6G-8_EP2 D1 (3)(4) G1 (1) S1 / D2 (2)(5)(6)(7) G2 (8) S2(9) N-Channel MOSFET Ordering and Marking Information SM7341EH Assembly Material Handling Code Temperature Range Package Code Package Code KP : DFN5x6G-8_EP2 Operating Junction Temp

Key Features

  • Channel 1 30V/24A, RDS(ON) = 3.9mW (max. ) @ VGS = 10V RDS(ON) = 6.5mW (max. ) @ VGS = 4.5V.
  • Channel 2 30V/44A, RDS(ON) = 1.2mW (max. ) @ VGS =10V RDS(ON) = 2mW (max. ) @ VGS =4.5V.
  • 100% UIS + Rg Tested.
  • Dual Dies Package and Minimize Board Space.
  • Lower Qg and Qgd for High-Speed Switching.
  • Lower RDS(ON) to Minimize Conduction Losses.
  • Reliable and Rugged.
  • Lead Free Available (RoHS Compliant).

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Datasheet Details

Part number SM7341EHKP
Manufacturer Sinopower
File Size 305.64 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SM7341EHKP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SM7341EHKP ® Dual N-Channel Enhancement Mode MOSFET Features · Channel 1 30V/24A, RDS(ON) = 3.9mW (max.) @ VGS = 10V RDS(ON) = 6.5mW (max.) @ VGS = 4.5V · Channel 2 30V/44A, RDS(ON) = 1.2mW (max.) @ VGS =10V RDS(ON) = 2mW (max.) @ VGS =4.5V · 100% UIS + Rg Tested · Dual Dies Package and Minimize Board Space · Lower Qg and Qgd for High-Speed Switching · Lower RDS(ON) to Minimize Conduction Losses · Reliable and Rugged · Lead Free Available (RoHS Compliant) Applications · Power Management in Desktop Computer or DC/DC Converters.