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SM7503NSG6 Datasheet Preview

SM7503NSG6 Datasheet

N-Channel MOSFET

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SM7503NSG6
N-Channel Enhancement Mode MOSFET
Features
• 75V/275A*
RDS(ON)=2.1mΩ(max.)@VGS=10V
• 100% UIS + Rg Tested
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Brushed motor drive applications
• BLDC motor drive applications
• Half-bridge and full-bridge topologies
• Synchronous rectifier applications
• DC/DC and AC/DC converters
Pin Description
D
S
S
S
S
S
G
TO-263-6
D
G
S
N-Channel MOSFET
Ordering and Marking Information
SM7503NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
G6 : TO-263-6
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM7503NS G6 :
SM7503NS
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are
fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL
classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl
does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest
version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor Inc.
Rev. A.3 - March, 2019
1
www.sinopowersemi.com




Sinopower

SM7503NSG6 Datasheet Preview

SM7503NSG6 Datasheet

N-Channel MOSFET

No Preview Available !

SM7503NSG6
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
75
V
±25
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
175
-55 to 175
°C
IS Diode Continuous Forward Current
TC=25°C
135
Continuous Drain Current
ID Continuous Drain Current
IDM Pulsed Drain Current
TC=25°C
TC=100°C
TC=25°C
275 *
195 *
640 a
A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
375
187.5
W
RqJC Thermal Resistance-Junction to Case
Steady State
0.4 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
24.6
A
20.6
PD Maximum Power Dissipation
TA=25°C
TA=70°C
3
W
2.1
Rc
qJA
Thermal Resistance-Junction to Ambient
Steady State
50 °C/W
IAS b Avalanche Current, Single pulse
L=0.5mH
60 A
EAS b Avalanche Energy, Single pulse
L=0.5mH
900 mJ
Note *Calculated continuous current based on maximum allowable junction temperature. Bonding wire limitation
current is 160A.
Note aPulse drain current is limited by source bonding technology.
Note bUIS tested and pulse width limited by maximum junction temperature 175oC (initial temperature Tj=25oC).
Note cSurface Mounted on 1in2 pad area.
Copyright © Sinopower Semiconductor Inc.
Rev. A.3 - March, 2019
2
www.sinopowersemi.com


Part Number SM7503NSG6
Description N-Channel MOSFET
Maker Sinopower
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