STT200 Description
method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=500us C V~ Nm/lb.in. g Mounting torque (M5) Terminal connection torque (M8) Typical including screws STT200 Thyristor-Thyristor Modules Symbol IRRM IDRM VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a per thyristor/diode; DC current per module per thyristor/diode;.
STT200 Key Features
- International standard package
- Direct copper bonded Al2O3-ceramic base plate
- Planar passivated chips
- Isolation voltage 3600 V~