SXA-389B Datasheet (Medium Power GaAs HBT Amplifier)

Part: SXA-389B
Manufacturer: Sirenza Microdevices
Size: 171.68 KB

SXA-389B Key Features

Now Available in Leed Free, RoHS pliant, & Green Packaging
Lower Rth for increased MTTF 108 hrs. at TLead = 85°C
On-chip Active Bias Control, Single 5V Supply
Excellent Linearity: +43 dBm typ. OIP3 at 1960 MHz
High P1dB : +25 dBm typ
High Gain: +18.5 dB at 850 MHz
Efficient: consumes only 575 mW

Other SXA-389B Datasheets

Manufacturer	Part Number	Description
RF Micro Devices	SXA-389	MEDIUM POWER GaAs HBT AMPLIFIER
RF Micro Devices	SXA-389Z	MEDIUM POWER GaAs HBT AMPLIFIER

SXA-389B Description

Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure...

SXA-389B Applications

Now Available in Leed Free, RoHS pliant, & Green Packaging
Lower Rth for increased MTTF 108 hrs. at TLead = 85°C