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SXA-389BZ Datasheet Medium Power GaAs HBT Amplifier

Manufacturer: Sirenza Microdevices

Download the SXA-389BZ datasheet PDF. This datasheet also includes the SXA-389B variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SXA-389B_SirenzaMicrodevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SXA-389BZ
Manufacturer Sirenza Microdevices
File Size 171.68 KB
Description Medium Power GaAs HBT Amplifier
Download SXA-389BZ Download (PDF)

General Description

Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surfacemountable plastic package.

These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA applications.

Overview

Product.

Key Features

  • Now Available in Leed Free, RoHS Compliant, & Green Packaging.
  • Lower Rth for increased MTTF 108 hrs. at TLead = 85°C.
  • On-chip Active Bias Control, Single 5V Supply.
  • Excellent Linearity: +43 dBm typ. OIP3 at 1960 MHz.
  • High P1dB : +25 dBm typ.
  • High Gain: +18.5 dB at 850 MHz.
  • Efficient: consumes only 575 mW Typical OIP3, P1dB, Gain 50 45 40 35 30 25 20 15 10 5 0 850 MHz 1960 MHz 2140 MHz OIP3 P1dB Gain dBm.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
RF Micro Devices Logo SXA-389 MEDIUM POWER GaAs HBT AMPLIFIER RF Micro Devices
RF Micro Devices Logo SXA-389Z MEDIUM POWER GaAs HBT AMPLIFIER RF Micro Devices

More Datasheets from Sirenza Microdevices

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SXA-389B Medium Power GaAs HBT Amplifier
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SXA-389Z Medium Power GaAs HBT Amplifier
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