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CDE7618-207 Datasheet Preview

CDE7618-207 Datasheet

Silicon Schottky Barrier Diodes

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DATA SHEET
Silicon Schottky Barrier Diodes in Hermetic and Epoxy
Ceramic Packages
Applications
Detectors
Mixers
Features
Available in both P-type and N-type low barrier designs
Low 1/f noise
Packages rated MSL1, 260 C per JEDEC J-STD-020
Description
Our packaged Schottky barrier detector diodes are designed for
applications through 20 GHz in the Ka band. They are made by
the deposition of a suitable barrier metal on an epitaxial silicon
substrate to form the junction. The process and choice of
materials result in low series resistance along with a narrow
spread of capacitance values for close impedance control. P-type
silicon is used to obtain superior 1/f noise characteristics. N-type
silicon is also available.
Packaged diodes are suitable for use in waveguide, coaxial, and
stripline applications.
The choice of N- and P-type silicon allows the designer to
optimize the silicon material for the intended application:
Doppler mixers and high-sensitivity detectors benefit from using
the low noise characteristics of the P-type silicon.
Low conversion loss mixers and biased detectors can be
designed using standard N-type material.
Applications
These diodes are categorized by Tangential Signal Sensitivity
(TSS) for detector applications in four frequency ranges: S, X, Ku,
and Ka bands. However, they can also be used as modulators,
high-speed switches, and low-power limiters.
TSS is a parameter that describes a diode’s detector sensitivity. It
is defined as the amount of signal power, below a one-milliwatt
reference level, required to produce an output pulse with an
amplitude sufficient to raise the noise fluctuations by an amount
equal to the average noise level. TSS is approximately 4 dB above
the minimum detectable signal.
The P-type Schottky diodes in this data sheet are optimized for
low noise in the 1/f region. They require a small forward bias (to
reduce video resistance) if efficient operation is required. The bias
not only increases sensitivity but also reduces parameter variation
due to temperature change. Video impedance is a direct function
of bias and follows the 26/l (mA) relationship. This is important to
pulse fidelity, since the video impedance together with the
detector output capacitance affects the effective amplifier
bandwidth.
Bias does, however, increase typical noise, particularly in the 1/f
region. Therefore, it should be kept as low as possible (typically 5
to 50 μA).
Electrical and physical specifications for the silicon Schottky
barrier diodes are provided in Tables 1 through 3. SPICE model
parameters are defined in Table 4. Typical I-V characteristics are
shown in Figures 1 and 2. Typical performance characteristics are
shown in Figures 3 and 4. Typical video detector circuits are
shown in Figure 5.
Phone [408] 946-1968 • Fax [408] 946-1960 • hirel.sales@skyworksinc.com • www.skyworksinc.com
203258C • Isolink Proprietary Information • Products and Product Information are Subject to Change Without Notice. • April 18, 2017
1




Skyworks

CDE7618-207 Datasheet Preview

CDE7618-207 Datasheet

Silicon Schottky Barrier Diodes

No Preview Available !

SILICON SCHOTTKY BARRIER DIODES
Table 1. Electrical Specifications: Beam-Lead P-Type Detector Schottky Diodes (Note 1)
Frequency
Band
Part Number
TSS
(dBm)
(Note 2)
Typical
Minimum
RV
()
Maximum
Total
Capacitance (CT)
@0V
(pF)
Maximum
X DDB2503-220
50
500
700
0.3
X DDB2503-230
50
500
700
0.3
X DDB2503-250
50
500
700
0.3
Ku DDB2504-220
48
500
700
0.2
Ku DDB2504-230
48
500
700
0.2
Ku DDB2504-250
48
500
700
0.2
K
DDB2265-220
50 (Note3)
800 (Note 3)
1200 (Note 3)
0.2
K
DDB2265-230
50 (Note3)
800 (Note 3)
1200 (Note 3)
0.2
K
DDB2265-250
50 (Note3)
800 (Note 3)
1200 (Note 3)
0.2
Note 1:
Note 2:
Note 3:
Performance is guaranteed only under the conditions listed in this table.
Bias = 50 μA
Video bandwidth = 10 MHz.
Bias = 30 μA
VF @ 1.0 mA
(mV)
Minimum
Maximum
200 350
200 350
200 350
200 350
200 350
200 350
300 450
300 450
300 450
VB @ 10 uA
(V)
Minimum
2
2
2
2
2
2
3
3
3
Table 2. Electrical Specifications: P-Type Detector Schottky Diodes (Note 1)
Frequency
Band Part Number
Barrier
RV
(Ω)
Typical
TSS
(dBm)
(Note 2)
Typical
Total
Capacitance
(CT) @ 0 V
(pF)
Maximum
VF @ 1 mA
(mV)
Minimum Maximum
Ku CDB7620-203 Low
537
+40
0.4 250 350
Ku CDB7620-207 Low
537
+40
0.4 250 350
K CDB7619-203 Low
735 +50 (Note 4)
0.35
275 375
K CDB7619-207 Low
735 +50 (Note 4)
0.35
275 375
Note 1:
Note 2:
Note 3:
Note 4:
Performance is guaranteed only under the conditions listed in this table.
Bias = 50 μA
Video bandwidth = 10 MHz
RV = 2800
Rt is the slope resistance @ 10 mA. The maximum series resistance (RS) is calculated as : RS = Rt – 2.8
Bias = 30 μA
Total
Resistance (RT)
@ 10 mA
(Ω)
(Note 3)
Maximum
30
30
40
40
VB @ 10 μA
(V)
Minimum
2
2
3
3
Phone [408] 946-1968 • Fax [408] 946-1960 • hirel.sales@skyworksinc.com • www.skyworksinc.com
203258C • Isolink Proprietary Information • Products and Product Information are Subject to Change Without Notice. • April 18, 2017
2


Part Number CDE7618-207
Description Silicon Schottky Barrier Diodes
Maker Skyworks
Total Page 9 Pages
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