silicon schottky barrier diodes.
* Available in both P-type and N-type low barrier designs
* Low 1/f noise
* Packages rated MSL1, 260 C per JEDEC J-STD-020
Description
Our packaged Schottky.
* Detectors
* Mixers
Features
* Available in both P-type and N-type low barrier designs
* Low 1/f noise.
Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of m.
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