CDE7618-000 Datasheet | Skyworks Solutions

DATA SHEET Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Applications - Detectors - Mixers Features - Available in both P-type and N-type low barrier designs - Low 1/f noise - Large bond pad chip design - Planar passivated beam-lead and chip construction Description Skyworks beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available. Beam-lead and chip diodes can be mounted on special customer substrates. Unmounted beam-lead diodes are especially well suited for use in microwave integrated circuit (MIC) applications. Mounted beamlead diodes can...