CDE7618-207 Datasheet Text
DATA SHEET
Silicon Schottky Barrier Diodes in Hermetic and Epoxy Ceramic Packages
Applications
- Detectors
- Mixers
Features
- Available in both P-type and N-type low barrier designs
- Low 1/f noise
- Packages rated MSL1, 260 C per JEDEC J-STD-020
Description
Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available.
Packaged diodes are suitable for use in waveguide, coaxial, and stripline applications.
The choice of N- and P-type silicon allows the designer to optimize the silicon material for the intended application:
- Doppler mixers and high-sensitivity...