* Low-Level Gate Characteristics IGT = 200 µA (Max) @ 25oC Low Holding Current IH = 1 mA (Max) @ 25oC Anode Common to Case Hermetically Sealed TX, TXV, S-Level Screening Available. Consult Factory 1.6 AMPS 200 ─ 400 VOLTS SILICON CONTROLLED
SFS1826
Solid States Devices
126.17 KB
(sfs1826 - sfs1829) silicon controlled rectifier.
SFS1826 thru SFS1829 Solid State Devices, Inc. 14830 Valley View Blvd La Mirada, Ca 90638 Phone: (562) 404-7855 Fax: (562) 404-1773 ssdi@s.
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