SFS1827
Overview
- Low-Level Gate Characteristics IGT = 200 µA (Max) @ 25oC Low Holding Current IH = 1 mA (Max) @ 25oC Anode Common to Case Hermetically Sealed TX, TXV, S-Level Screening Available. Consult Factory
- 6 AMPS 200 ─ 400 VOLTS SILICON CONTROLLED RECTIFIER
