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SFS1826 - SILICON CONTROLLED RECTIFIER

Features

  • Low-Level Gate Characteristics IGT = 200 µA (Max) @ 25oC Low Holding Current IH = 1 mA (Max) @ 25oC Anode Common to Case Hermetically Sealed TX, TXV, S-Level Screening Available. Consult Factory 1.6 AMPS 200 ─ 400 VOLTS.

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Datasheet Details

Part number SFS1826
Manufacturer Solid States Devices
File Size 126.17 KB
Description SILICON CONTROLLED RECTIFIER
Datasheet download datasheet SFS1826 Datasheet

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Full PDF Text Transcription

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SFS1826 thru SFS1829 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet FEATURES: • • • • • • Low-Level Gate Characteristics IGT = 200 µA (Max) @ 25oC Low Holding Current IH = 1 mA (Max) @ 25oC Anode Common to Case Hermetically Sealed TX, TXV, S-Level Screening Available. Consult Factory 1.6 AMPS 200 ─ 400 VOLTS SILICON CONTROLLED RECTIFIER MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage SFS1826 SFS1827 SFS1828 SFS1829 SFS1826 SFS1827 SFS1828 SFS1829 Symbol VDRM VRRM Value 200 250 300 400 300 350 400 500 1.6 1.0 0.7 15 0.1 0.01 0.1 6.0 -65 to +200 -65 to +200 72 Units Volts Non-Repetitive Peak Reverse Blocking Voltage (t < 5.
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