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2N5912 Solitron Devices Dual Matched N-Channel JFET

Solitron Devices
Description The -25V 2N5911 and 2N5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. TX, TXV, and S-Level Screening Available - Consult Factory. Source Case 5 6 Drain Gate 3 Drain 2 1 Sou...
Features LOW NOISE: 4.0 NV/√HZ TYPICAL LOW LEAKAGE: 10PA TYPICAL LOW INPUT CAPACITANCE: 5.0 PF TYPICAL DESCRIPTION The -25V 2N5911 and 2N5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, ...

Datasheet PDF File 2N5912 Datasheet 105.94KB

2N5912   2N5912   2N5912  




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