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SD11705 - 1200V SiC N-Channel Power MOSFET

Description

1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max VGS, op Gate-Source Voltage (Max.) Gate-Source Voltage lD Continuous Drain Current lD, pulse Pulsed Drain Current PD Maximum Power Dissipation TJ, TSTG Junct

Features

  • LOW RDS(ON) AND QG.

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Datasheet Details

Part number SD11705
Manufacturer Solitron Devices
File Size 895.67 KB
Description 1200V SiC N-Channel Power MOSFET
Datasheet download datasheet SD11705 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KEY FEATURES LOW RDS(ON) AND QG AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS SWITCH-MODE AND RESONANT-MODE POWER SUPPLIES DC-DC CONVERTERS PFC CIRCUITS AC AND DC MOTOR DRIVES ROBOTICS AND SERVO CONTROLS SD11705 1200V SiC N-Channel Power MOSFET - 1 VDS = 1200V 2-D ID @ 25°C = 50A RDS(on) = 32mΩ 1-G 3-S ORDERING GUIDE Part Number SD11705 Description 1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max VGS, op Gate-Source Voltage (Max.
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