Datasheet Details
| Part number | SD11704 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 97.56 KB |
| Description | 900V SiC N-Channel Power MOSFET |
| Datasheet | SD11704-SolitronDevices.pdf |
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Overview: KEY.
| Part number | SD11704 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 97.56 KB |
| Description | 900V SiC N-Channel Power MOSFET |
| Datasheet | SD11704-SolitronDevices.pdf |
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900V SiC N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) PARAMETER SYMBOL VALUE Drain to Source Voltage (static) VDSmax 900V Continuous Drain Current ID 32A Pulsed Drain Current IDM 128A Max.
Power Dissipation PD 278W Gate-to-Source Voltage (dynamic) VGSmax -10/+25V Gate-to-Source Voltage (static) VGSop -5/+20V Operating Junction Temperature TJ -55°C to 150°C Storage Temperature Range TSTG -55°C to 150°C Solder Temperature TL 260°C CONDITIONS VGS = 0V, ID = 100µA VGS = 20V, TC = 25°C VGS = 20V, limited by the package TC = 25°C, TJ = 150°C 1.6mm (0.063”) from case for 10s CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com SD11704 900V SiC N-Channel Power MOSFET - 2 ELECTRICAL SPECIFICATIONS TJ = 25°C unless otherwise noted Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Forward Drain-to-Source On-State Resistance Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Switching Energy Turn-Off Switching Energy Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Conditions VGS = 0V, ID = 100µA VDS = VGS, ID = 15mA, TJ = 25°C VDS = VGS, ID = 15mA, TJ = -55°C VDS = VGS, ID = 15mA, TJ = 175°C VDS = 900V, VGS = 0V VGS = 20V, VDS = 0V VGS = 20V, ID = 25A, TJ = 25°C VGS = 20V, ID = 25A, TJ = 175°C VDS = 16V, IDS = 25A, TJ = 25°C VGS = 0V, VDS = 25V, f = 1.0MHz VDS = 300V, VGS = -3/25V, ID = 30A, RGon / RGoff = 10Ω, L = 412µH VDS = 300V,
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