Datasheet Details
| Part number | SD11705 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 895.67 KB |
| Description | 1200V SiC N-Channel Power MOSFET |
| Datasheet | SD11705-SolitronDevices.pdf |
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Overview: KEY.
| Part number | SD11705 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 895.67 KB |
| Description | 1200V SiC N-Channel Power MOSFET |
| Datasheet | SD11705-SolitronDevices.pdf |
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1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max VGS, op Gate-Source Voltage (Max.) Gate-Source Voltage lD Continuous Drain Current lD, pulse Pulsed Drain Current PD Maximum Power Dissipation TJ, TSTG Junction Temperature, Operating and Storage TEST CONDITIONS VGS = 0V, ID = 19µA Absolute maximum values Recommended operational values VGS = 15V Pulse Width tp Limited by Tjmax VALUE 1200 -8/+19 -4/+15 50 160 176 -55 to +175 UNIT V V V A A W °C CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com SD11705 1200V SiC N-Channel Power MOSFET - 2 ELECTRICAL CHARACTERISTICS (TC = 25°C) SYMBOL CHARACTERISTIC V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage lDSS IGSS RDS (on) Off -State Drain Current Gate-Source Leakage Current Drain-Source On-state Resistance gfs Transconductance Ciss * Input Capacitance Coss * Output Capacitance Crss * Reverse Transfer Capacitance TEST CONDITIONS VGS < 0V, ID = 19µA VDS = VGS, IDS = 11mA, Ta = - 55°C VDS = VGS, IDS = 11mA, Ta = + 25°C VDS = VGS, IDS = 11mA, Ta = + 175°C VGS = 0V, VDS = 1200V VGS = +15V, VDS = 0V VGS = 15V, ID = 40A, TJ = 25°C VGS = 15V, ID = 40A, TJ = 175°C VDS = 20V, IDS = 40A, Ta = 25°C VDS = 20V, IDS = 40A, Ta = 175°C VGS = 0V, VDS = 1000V, f = 100kHz, Vac = 25mV BODY DIODE RATINGS AND CHARACTERISTICS (Tc = 25°C) SYMBOL CHARACTERISTIC TEST CONDITIONS VSD Diode Forward Voltage VGS = 0V trr Reverse Recovery Time Qrr Reverse Recov
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