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CXK5B41020TM - High Speed Bi-CMOS Static RAM

Download the CXK5B41020TM datasheet PDF. This datasheet also covers the CXK5B41020TM- variant, as both devices belong to the same high speed bi-cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

static RAM organized as 262144 words by 4 bits.

applications.

Features

  • Single 3.3V power supply: 3.3V±0.3V.
  • Fast access time 12ns (Max. ).
  • Low standby current: 10mA (Max. ).
  • Low power operation 792mW (Max. ).
  • Package line-up Dual Vcc/Vss CXK5B41020TM 400mil 32pin TSOP package Function 262144 word × 4-bit static RAM Structure Silicon gate Bi-CMOS IC Block Diagram Pin Configuration (Top View) Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CXK5B41020TM-_SonyCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CXK5B41020TM -12 262144-word × 4-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5B41020TM is a high speed 1M bit Bi-CMOS 32 pin TSOP (PIastic) static RAM organized as 262144 words by 4 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications. Features • Single 3.3V power supply: 3.3V±0.3V • Fast access time 12ns (Max.) • Low standby current: 10mA (Max.) • Low power operation 792mW (Max.
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