Datasheet4U Logo Datasheet4U.com

SLD332F - 1W High Power Laser Diode

Description

The SLD332F is a 1W high power laser diode designed to have a uniform emission area that is suitable for the applications for solid-state laser excitation, measurement, printing, etc.

Features

  • Recommended optical power output Po = 1W ‹ High-optical power density: 1W/100μm (Emitting line width) Package M-S035 Structure ‹ AlGaAs quantum well structure laser diode Operating Lifetime ‹ MTTF 10,000h (effective value) at Po = 1W, Tc = 25°C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right.

📥 Download Datasheet

Datasheet preview – SLD332F

📁 Similar Datasheet

  • SLD33-018 - TVS Diodes (Littelfuse)
  • SLD33A - 6000Watt Transient Voltage Suppressors (MCC)
  • SLD33CA - 6000Watt Transient Voltage Suppressors (MCC)
  • SLD33U-017 - TVS Diodes (Littelfuse)
  • SLD30-018 - TVS Diodes (Littelfuse)
  • SLD3091FZ - 30 Watt Discrete LDMOS FET (Sirenza Microdevices)
  • SLD30A - 6000Watt Transient Voltage Suppressors (MCC)
  • SLD30CA - 6000Watt Transient Voltage Suppressors (MCC)
  • SLD30L03A - N- and P-Channel MOSFET (Msemitek)
  • SLD30U-017 - TVS Diodes (Littelfuse)
Other Datasheets by Sony Corporation
  • SLD332V - 1W High Power Laser Diode
  • SLD334YT - 2W High Power Laser Diode
  • SLD335F - 5W High Power Laser Diode
  • SLD335YT - 4W High Power Laser Diode
  • SLD301B - Block-type 100mW High Power Laser Diode
  • SLD301V - 100mW High Power Laser Diode
  • SLD301WT - 100mW HIGH POWER LASER DIODE
  • SLD301XT - 100mW High Power Laser Diode

Full PDF Text Transcription

Click to expand full text
1W High Power Laser Diode SLD332F Description The SLD332F is a 1W high power laser diode designed to have a uniform emission area that is suitable for the applications for solid-state laser excitation, measurement, printing, etc. www.DataSheet4U.com ‹ High-power Features Recommended optical power output Po = 1W ‹ High-optical power density: 1W/100μm (Emitting line width) Package M-S035 Structure ‹ AlGaAs quantum well structure laser diode Operating Lifetime ‹ MTTF 10,000h (effective value) at Po = 1W, Tc = 25°C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right.
Published: |