* Super high density cell design for low RDS(ON) . Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30
SSD3030P Datasheet (177.95 KB)
SSD3030P
South Sea Semiconductor
177.95 KB
P-channel enhancement mode mosfet.
P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 25 @VGS = -10V -30V -30A 45 @VGS = -5V 55 @VGS = -4.5V G S D SSD303.
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