Full PDF Text Transcription for SSM4953 (Reference)
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SSM4953. For precise diagrams, and layout, please refer to the original PDF.
A RDS(ON) (mΩ) Max 60 @VGS = -10V 1 95 @VGS = -4.5V 2 3 4 D1 (7, 8) D2 (5, 6) FEATURES Super high density cell design for low R DS(ON). Rugged and reliable. SO-8 package. Pb free. G1 (2) S1(1) G2 (4) S2(3) ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 + - 20 -4.5 -23 -1.7 2 -55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, J
SSM4953 Datasheet
