The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM4953M
P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement Low on-resistance Fast switching
D1 D2 D1
D2
BVDSS RDS(ON) ID
G2 S2
-30V 53mΩ -5A
SO-8
S1
G1
Description
MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low voltage applications such as DC/DC converters.
G1
D1
D2
G2 S1 S2
Absolute Maximum Ratings
Symbol VDS VGS I D @ TA=25°C I D @ TA=70°C I DM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1,2 3 3
Rating - 30 ±20 -5 -4 -20 2 0.