Datasheet4U Logo Datasheet4U.com

SSM4953M - P-channel Enhancement-mode Power MOSFET

General Description

MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

📥 Download Datasheet

Datasheet Details

Part number SSM4953M
Manufacturer Silicon Standard
File Size 100.46 KB
Description P-channel Enhancement-mode Power MOSFET
Datasheet download datasheet SSM4953M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSM4953M P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Low on-resistance Fast switching D1 D2 D1 D2 BVDSS RDS(ON) ID G2 S2 -30V 53mΩ -5A SO-8 S1 G1 Description MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low voltage applications such as DC/DC converters. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS I D @ TA=25°C I D @ TA=70°C I DM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating - 30 ±20 -5 -4 -20 2 0.