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SSM4953
Dual P-Channel Enhancement Mode MOSFET
Product Summary
VDS (V)
-30V
SO-8
8 7 6 5
ID (A)
-4.5A
RDS(ON) (mΩ) Max 60 @VGS = -10V
1
95 @VGS = -4.5V
2
3
4
D1 (7, 8)
D2 (5, 6)
FEATURES
Super high density cell design for low R DS(ON). Rugged and reliable. SO-8 package. Pb free.
G1 (2) S1(1) G2 (4) S2(3)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
-30 + - 20 -4.5 -23 -1.7 2 -55 to 150
Unit
V V A A A W
o
Drain-Source Diode Forward Current Maximum Power Dissipation
a
IS PD TJ, TSTG
Operating Junction and Storage Temperature Range
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R
JA
62.
SSM4953 Datasheet
