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SSM4957(G)M
DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement Lower gate charge Fast switching characteristics
D1 D2 D1
D2
BV DSS R DS(ON) ID
G2 S2
-30V 24mΩ -7.7A
SO-8
G1 S1
Description
Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM4957M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low-voltage applications.
G1
D1
D2
G2 S1 S2
This device is available with Pb-free lead finish (second-level interconnect) as SSM4957GM.
SSM4957M Datasheet
