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ST2341 - P-Channel Enhancement Mode MOSFET

Description

ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST2341
Manufacturer Stanson
File Size 398.34 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST2341 Datasheet
Additional preview pages of the ST2341 datasheet.

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Full PDF Text Transcription

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P Channel Enhancement Mode MOSFET ST2341 -3.5A DESCRIPTION ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE z 3 D G 1 1.Gate 2.Source S 2 3.Drain z z z z http://www.DataSheet4U.net/ z -20V/-3.3A, RDS(ON) = 36m-ohm (Typ.) @VGS = -10V -20V/-2.8A, RDS(ON) = 45m-ohm @VGS = -4.5V -20V/-2.3A, RDS(ON) = 55m-ohm @VGS = -1.
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