DESCRIPTION
The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 1.Gate 2.Source 3.Drain FEATURE -20V/-3.3A, RDS(ON) = 30m-ohm (Typ.) @VGS = -4.5V -20V/-2.8A, RDS(ON) = 40m-ohm @VGS = -2.5V -20V/-2.3A, RDS(ON) = 53m-ohm @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design PART MARKING SOT-23-3L 3 41YA 1 2 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST2341SRG3RG 2006. Rev.1 ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A ABSOULTE MAXIMUM RATINGS
(Ta = 25 Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150 ) TA=25 TA=70 Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25 TA=70 Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient Symbol Typical VDSS VG...
Stanson Technology
