ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | ST2341S23RG |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 599.83 KB |
| Description | P-Channel Enhancement Mode MOSFET |
| Datasheet |
 ST2341S23RG Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| ST2341S23RG | P-Channel MOSFET | VBsemi |
| ST2341 | P-Channel Enhancement Mode MOSFET | Stanson |
| ST2341A | P-Channel Enhancement Mode MOSFET | Stanson |
| ST2342 | N-Channel Enhancement Mode MOSFET | Stanson |
| ST2349 | 4-bit dual supply level translator | STMicroelectronics |
| Part Number | Description |
|---|---|
| ST2341SRG | P-Channel Enhancement Mode MOSFET |
| ST2300 | N-Channel Enhancement Mode MOSFET |
| ST2300SRG | N-Channel Enhancement Mode MOSFET |
| ST2301 | P Channel Enchancement Mode MOSFET |
| ST2301A | P-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
