ST2341S23RG Overview
Description
ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Key Features
- Rev.1 ST2341S23RG P Channel Enhancement Mode MOSFET
- 55/150 R JA 140 Unit V V A A A W /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST2341SRG3RG
- Rev.1 ST2341S23RG P Channel Enhancement Mode MOSFET
