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STN4438 Datasheet Preview

STN4438 Datasheet

N-Channel Enhancement Mode MOSFET

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STN4438
N Channel Enhancement Mode MOSFET
8.2A
DESCRIPTION
STN4438 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
l 60V/8.2A, RDS(ON) = 25mΩ (Typ.)
@VGS = 10V
l 60V/7.6A, RDS(ON) = 30mΩ
@VGS = 4.5V
l Super high density cell design for
extremely low RDS(ON)
l Exceptional on-resistance and maximum
DC current capability
l SOP-8 package design
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
PDF created with pdfFactory Pro trial version www.pdffactory.com
Copyright © 2008, Stanson Corp.
STN4438 2009. V1




Stanson

STN4438 Datasheet Preview

STN4438 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

STN4438
N Channel Enhancement Mode MOSFET
8.2A
ABSOULTE MAXIMUM RATINGS (Ta = 25Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current
(TJ=150)
Pulsed Drain Current
TA=25
TA=70
VGSS
ID
IDM
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25
TA=70
Operation Junction Temperature
IS
PD
TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
60
±20
8.2
6.6
40
3.0
3.1
2.0
150
-55/150
70
Unit
V
V
A
A
A
W
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
PDF created with pdfFactory Pro trial version www.pdffactory.com
Copyright © 2008, Stanson Corp.
STN4438 2009. V1


Part Number STN4438
Description N-Channel Enhancement Mode MOSFET
Maker Stanson
PDF Download

STN4438 Datasheet PDF






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