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STN4438 - N-Channel Enhancement Mode MOSFET

General Description

STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STN4438
Manufacturer Stanson
File Size 263.44 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet STN4438 Datasheet

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STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE l 60V/8.2A, RDS(ON) = 25mΩ (Typ.) @VGS = 10V l 60V/7.6A, RDS(ON) = 30mΩ @VGS = 4.