UMW STN4438
STN4438 is the N-Channel logicenhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.STN4438 Specifications
- Drain-Source Voltage : 60V
Source:
Octopart
| Part No. | STN4438 |
|---|---|
| Datasheet | STN4438 Download |
| Manufacturer | UMW |
| Description | 60V N-ChanneI MOSFET |
| Buy | Stock & Price |
DESCRIPTION
3.Pinning information Pin 4 1,2,3 5,6,7,8 Symbol G S DDESCRIPTION
GATE SOURCE DRAIN SOP-8 4.ABSOLUTE MAXIMUM RATINGS
TA= 25°C 2.FEATURES
VDS (V)=60V RDS(ON)<32mΩ(VGS=10V) RDS(ON)<37mΩ(VGS=4.5V) 8765 D D D D D G S S S G S 1234 Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ=150°C)) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Value 60 ±20 8.2 6.6 40 3 3.1 2 150 -55 to 150 70 Units V V A W °C °C °C/W UTD Semiconductor Co.,Limited Nov.2024 1 of 7 UMW STN4438 60V N-ChanneI MOSFET 5.TA=25°C unless otherwise noted Parameter Static Drain-source breakdown voltage Gate Threshold Voltage Gate-source leakage Zero gate voltage drain current On-State Drain Current Drain-source On Resistance Forward Transconductance Diode Forward Voltage Dynamic Tot...
