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STN4438 - 60V N-ChanneI MOSFET

Description

STN4438 is the N-Channel logicenhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

Features

  • VDS (V)=60V RDS(ON).

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Datasheet Details

Part number STN4438
Manufacturer UMW
File Size 903.46 KB
Description 60V N-ChanneI MOSFET
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UMW STN4438 60V N-ChanneI MOSFET 1.Description STN4438 is the N-Channel logicenhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. 3.Pinning information Pin 4 1,2,3 5,6,7,8 Symbol G S D Description GATE SOURCE DRAIN SOP-8 4.Absolute Maximum Ratings TA= 25°C 2.Features VDS (V)=60V RDS(ON)<32mΩ(VGS=10V) RDS(ON)<37mΩ(VGS=4.
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