STN4438 Description
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
STN4438 Key Features
- 60V/8.2A, RDS(ON) = 25mΩ (Typ.) @VGS = 10V
- 60V/7.6A, RDS(ON) = 30mΩ @VGS = 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- SOP-8 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mount