STN4438 Datasheet PDF

Stanson STN4438

STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.

Part No.	STN4438
Datasheet	STN4438 Download
Manufacturer	Stanson
Description	N-Channel Enhancement Mode MOSFET
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DESCRIPTION

PIN CONFIGURATION SOP-8 FEATURE l 60V/8.2A, RDS(ON) = 25mΩ (Typ.) @VGS = 10V l 60V/7.6A, RDS(ON) = 30mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA PDF created with pdfFactory Pro trial version Copyright © 2008, Stanson Corp. STN4438 2009. V1 STN4438 N Channel Enhancement Mode MOSFET 8.2A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 60 ±20 8.2 6.6 40 3.0 3.1 2.0 150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA PDF created with pdfFactory Pro trial version Copyright © 2008, Stanson Corp.

STN4438 Datasheets by Manufacturer

1 datasheets

Part Number	Manufacturer
STN4438	UMW