NPN TRANSISTOR
1.5A
8050
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25
PARAMETERS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Leakage
Collector-Emitter Leakage
Emitter-Base Leakage
Collector-Emitter Saturation Voltage
Base-Emiiter Saturation Voltage
DC Current Gain
Collector Current
Peak Collector Current
Current Gain Bandwidth
Output Capacitance
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL MIN TYP MAX UNIT
CONDITION
BVceo
V Ic=0.1mA
BVcbo 45
V Ic=100 A
BVebo
V Ie=100 A
Icbo
0.1 uA
Vcb=40V
Iceo
0.1 uA
Vce=20V
Iebo
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Vce(sat
0.1 uA
Veb=5V
0.6 V Ic=1500mA, Ib=50mA
Vbe(sat)
1.2 V Ic=1500mA, Ib=50mA
Hfe1 85
Vce=1V,Ic=50mA
Hfe2 50
Vce=1V,Ic=500mA
Ic 1.5 A
Icp 8 A(Pulse)
fT MHz Vcb=6V, Ic=20mA
Cob 32 pF Vcb=20V,Ie=0,f=1MHz
Pc 1.0 W
Tj 150
Tstg -55
150
Hfe1 Classification
Rank
Range
B
85-160
C
120-200
D
160-300
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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