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2N7002-G - N-Channel Enhancement-Mode Vertical DMOS FETs

Download the 2N7002-G datasheet PDF. This datasheet also covers the 2N7002 variant, as both devices belong to the same n-channel enhancement-mode vertical dmos fets family and are provided as variant models within a single manufacturer datasheet.

Description

The Supertex 2N7002 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Features

  • Free from secondary breakdown.
  • Low power drive requirement.
  • Ease of paralleling.
  • Low CISS and fast switching speeds.
  • Excellent thermal stability.
  • Integral source-drain diode.
  • High input impedance and high gain.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N7002_SupertexInc.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N7002-G
Manufacturer Supertex
File Size 345.01 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet 2N7002-G Datasheet

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Other Datasheets by Supertex

Part Number Description
2N7007 N-Channel Enhancement-Mode Vertical DMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►Excellent thermal stability ►►Integral source-drain diode ►►High input impedance and high gain Applications ►►Motor controls ►► Converters ►► Amplifiers ►► Switches ►►Power supply circuits ►►Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description The Supertex 2N7002 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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